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MB86978 DNF32 A67L8318 M534002 MEDM2050 W52NK25Z DL400 MNR4G
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  Datasheet File OCR Text:
 SBP735 THRU SBP760
Features
* Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 * Metal silicon junction, majority carrier conduction * Guard ring for overvoltage protection * Low power loss, high efficiency * High current capability, Low forward voltage drop * Single rectifier construction * High surge capability * For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications * High temperature soldering guaranteed : 250E /10 seconds, 0.25"(6.35mm) from case
CURRENT 7.5Amperes VOLTAGE 35 to 60 Volts
ITO-220A
10 0.5 3.2 6.4 0.1 4.5 0.2 2.7
2.7 0.2 3.7 0.2
Mechanical Data
* Case : JEDEC ITO-220A molded plastic body * Terminals : Lead solderable per MIL-STD-750, Method 2026 * Polarity : As marked * Mounting Position : Any * Weight : 0.08 ounce, 2.24 gram
PIN 1
+
5.08
0.7 0.2
13Min
1.3 0.2
15 0.3
0.5 2.4 PIN 1 CASE PIN 2 + Case Negative Suffix"R"
CASE PIN 2 CasePositive
+
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25E ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive load. For capacitive load, derate by 20%)
Symbols Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current (see Fig. 1) Repetitive peak forward current(square wavr, 20KHZ) at TC=105E Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Maximum instantaneous forward voltage at 7.5A (Note 1) Maximum instantaneous reverse current at rated DC blocking voltage (Note1) Typical thermal resistance (Note 2) Operating junction temperature range Storage temperature range TA=25E TA=125E VRRM VRMS VDC I(AV) IFRM SBP735 35 25 35
SBP745
SBP750 50 35 50 7.5 15.0
SBP760 60 42 60
Units Volts Volts Volts Amps Amps
45 32 45
IFSM
150.0
Amps
VF IR Re JC TJ TSTG
0.65 1.0 15 5.0 -65 to +150 -65 to +150
0.75
Volts
50
mA E /W E E
Notes:
(1) Pulse test: 300iS pulse width, 1% duty cycle (2) Thermal resistance from junction to case
RATINGS AND CHARACTERISTIC CURVES SBP735 THRU SBP760
FIG.1-FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT AMPERES 10
RESISTIVE OR INDUCTIVE LOAD
FIG.2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
175 PEAK FORWARD SURGE CURRENT (AMPERES) 150 125 100 75 50 25
TJ=TJMAX 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method)
8.0 6.0 4.0 2.0 0 0 50 100 150 LEAD TEMPERATURE (E )
| | SBP735--SBP745 - - - SBP750&SBP760
1
10 NUMBER OF CYCLES AT 60Hz
100
FIG.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
50 INSTANTANEOUS FORWARD CURRENT (AMPERES) INSTANTANEOUS REVERSE CURRENT MILL (AMPERES)
FIG.4-TYPICAL REVERSE CHARACTERISTICS
20 10
| | SBP735--SBP745 - - - SBP750&SBP760
10
TJ=125E
PULSE WIDTH=300A 1% DUTY CYCLE
TJ=125E
1
1
TJ=25E
0.1
TJ=75E
0.1
0.01
| | SBP735--SBP745 - - - SBP750&SBP760
0.01 0 0.1 0.2 0.3 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.001 0 20 40 60
TJ=25E
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.5-TYPICAL JUNCTION CAPACITANCE
TRANSIENT THERMAL IMPEDANCE,E / W 4000 JUNCTION CAPACITANCE (pF)
TJ=25E f=1.0MHz Vsig=50mVp-p
FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
1000
10
1
100 40 0.1
| | SBP735--SBP745 - - - SBP750&SBP760
0.1
0.01
0.1
1 T, PULSE DURATION, sec.
10
100
1
10
100
REVERSE VOLTAGE. VOLTS


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